1.方向压降高，暗光
1 direction high pressure drop, dark
A：一种是电极与发光资料为欧姆触摸，但触摸电阻大，首要由资料衬底低浓度或电极残缺所形成的。
A: one is the electrode and the light-emitting material for the ohm touch, but touch resistance is large, mainly by the data base of low concentration or electrode formed by the.
B：一种是电极与资料为非欧姆触摸，首要发生在芯片电极制备进程中蒸腾第一层电极时的挤压印或夹印，散布方位。
B: one is the electrode and the data for non ohmic touch, the first occurred in the process of chip electrode preparation in the first layer of the electrode during the evaporation of the printing or printing, dispersion direction.
其他封装进程中也也许形成正向压降变，首要因素有银胶固化不充分，支架或芯片电极沾污等形成触摸电阻大或触摸电阻不稳定。
Other packaging process may also lead to the formation of a positive pressure drop, the primary factor is not sufficient curing of silver glue, stent or chip electrode contamination, such as the formation of large touch resistance or touch resistance instability.
正向压降变的芯片在固定电压测验时，经过芯片的电流小，然后体现暗点，还有一种暗光景象是芯片自身发光功率低，正向压降正常。
The forward voltage drop at a fixed voltage test chip, the chip after a small current, and then reflect the scotoma and a dark scene is self luminous chip low power forward voltage drop to normal.
2.难压焊：(首要有打不粘，电极掉落，打穿电极)
2 difficult to press welding: (the first to play non stick, electrode drop, hit the electrode)
A：打不粘：首要因为电极外表氧化或有胶
A: Non Stick: mainly because the surface of the electrode oxidation or glue
B：有与发光资料触摸不牢和加厚焊线层不牢，其间以加厚层掉落为主。
B: there is no touch with the light-emitting material and thick welding line layer is not thick, during which the thick layer of the main drop.
C：打穿电极：通常与芯片资料有关，资料脆且强度不高的资料易打穿电极，通常GAALAS资料(如高红，红外芯片)较GAP资料易打穿电极，
C: through the electrode: usually associated with the chip data, the data is brittle and the strength of the material is not easy to hit the electrode, usually GAALAS data (such as high red, infrared chip) than the GAP data is easy to hit the electrode,
D：压焊调试应从焊接温度，超声波功率，超声时刻，压力，金球巨细，支架定位等进行调整。
D: pressure welding debugging should be welding temperature, ultrasonic power, ultrasonic time, pressure, the size of the ball, stent positioning, etc..
3.发光色彩区别：
3 luminous color difference:
A：同一张芯片发光色彩有显着区别首要是因为外延片资料疑问，ALGAINP四元素资料选用量子结构很薄，成长是很难保证各区域组分共同。(组分决议禁带宽度，禁带宽度决议波长)。
A: the same chip light-emitting color has a significant difference is mainly due to the epitaxial film data query, ALGAINP four element data selection of quantum structure is very thin, it is difficult to ensure that the growth of regional components of common. Resolution of the forbidden band width of the forbidden band.
B：GAP黄绿芯片，发光波长不会有很大误差，但是因为人眼对这个波段色彩灵敏，很简单查出偏黄，偏绿。因为波长是外延片资料决议的，区域越小，呈现色彩误差概念越小，故在M/T工作中有附近选取法。
B:GAP yellow green chip, the luminous wavelength will not be a big error, but because of the color of the band sensitive to the human eye, it is easy to identify the yellowish, partial green. Because the wavelength is the resolution of the epitaxial wafer, the smaller the area, the smaller the concept of color error, so there is a near selection method in M/T work.
C：GAP赤色芯片有的发光色彩是偏橙黄色，这是因为其发光机理为直接跃进。受杂质浓度影响，电流密度加大时，易发生杂质能级偏移和发光饱满，发光是开端变为橙黄色。
C:GAP red chip some luminous color is partial orange yellow, this is because of its luminous mechanism for direct leap. Affected by the concentration of impurities, the current density increases, prone to impurity level shift and full of light, light is the beginning of the orange yellow.
4.闸流体效应;
4 gate fluid effect;
A：是发光二极管在正常电压下无法导通，当电压加高到必定程度，电流发生骤变。
A: is a light emitting diode to guide in the normal voltage, when the voltage is high to a certain level, the current changes happened.
B：发生闸流体景象因素是发光资料外延片成长时呈现了反向夹层，有此景象的LED在IF=20MA时测验的正向压降有躲藏性，在使用进程是出于两极电压不够大，体现为不亮，可用测验信息仪器从晶体管图示仪测验曲线，也能够经过小电流IF=10UA下的正向压降来发现，小电流下的正向压降显着偏大，则也许是该疑问所形成的。
B: the thyristor sight factor is the luminous data show the inverse epitaxial wafer growth interlayer, this picture of the LED in IF=20MA when the forward voltage drop from test, in the process of use for two voltage is not big enough, not bright, available test instrument information graphic instrument test curve from the crystal tube, can to find after IF=10UA low current forward voltage drop, low current voltage drop significantly larger, it may be formed by the doubt.
5.反向漏电：
5 reverse leakage:
A：因素：外延资料，芯片制造，器材封装，测验通常5V下反向漏电流为10UA，也能够固定反向电流下测验反向电压。
A: factors: epitaxial data, chip manufacturing, packaging equipment, test the reverse leakage current is usually 5V 10UA, can also be fixed reverse current reverse voltage test.
B：不同类型的LED反向特性相差大：普绿，普黄芯片反向击穿可到达一百多伏，而普芯片则在十几二十伏之间。
B LED: the reverse characteristics of different types of the big difference: Pu Pu green, yellow chip breakdown can reach more than and 100 volts, and general chip in ten volts.
C：外延形成的反向漏电首要由PN结内部结构缺点所形成的，芯片制造进程中旁边面腐蚀不够或有银胶丝沾附在测面，严禁用有机溶液分配银胶。以避免银胶经过毛细景象爬到结区。
C: the formation of reverse leakage is mainly formed by the internal defects of the internal structure of the PN junction, the chip manufacturing process in the next side of the corrosion is not enough or silver glue wire attached to the surface, it is prohibited to use organic solution distribution of silver glue. In order to avoid the silver glue to climb to the junction area.

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